![]() ![]() as shown in the curve A can be effectively used. In the present invention, among these polycrystals, only the polycrystal showing the discontinuous crystal grain growth at the particularly defined temperature T☌. The present invention has been made for obviating these prior defects and problems and consists in a method for producing a large single crystal wherein a single crystal which is a seed (nucleus) is contacted to a polycrystal and the contacted crystals are fired to effect a solid phase reaction whereby a single crystal is grown and particularly consists in a method for producing a single crystal wherein a polycrystal showing a discontinuous crystal grain growth at a high temperature is contacted with a single crystal, in which the composition is substantially the same as or different from the polycrystal and the crystal structure is substantially the same as the polycrystal and the contacted crystals are heated at a temperature lower then the temperature at which a discontinuous crystal grain growth is caused, to cause a solid phase reaction at the interface between microcrystal grains forming the polycrystal and the single crystal and integrate the microcrystal grains in the polycrystal and the single crystal to grow the single crystal. C30B29/26- Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al.C30B29/10- Inorganic compounds or compositions.C30B29/00- Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape.C30B1/02- Single-crystal growth directly from the solid state by thermal treatment, e.g. ![]() C30B1/00- Single-crystal growth directly from the solid state.C30B- SINGLE-CRYSTAL GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from JP54-67893 external-priority Priority claimed from JP54067893A external-priority patent/JPS611391B2/ja Priority claimed from JP54098055A external-priority patent/JPS6249647B2/ja Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd Application granted granted Critical Publication of US4519870A publication Critical patent/US4519870A/en Anticipated expiration legal-status Critical Status Expired - Lifetime legal-status Critical Current Links Original Assignee NGK Insulators Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US06/443,030 Inventor Soichiro Matsuzawa Syunzo Mase Current Assignee (The listed assignees may be inaccurate. Google Patents Method for producing a single crystalĭownload PDF Info Publication number US4519870A US4519870A US06/443,030 US44303082A US4519870A US 4519870 A US4519870 A US 4519870A US 44303082 A US44303082 A US 44303082A US 4519870 A US4519870 A US 4519870A Authority US United States Prior art keywords single crystal ferrite polycrystal temperature crystal Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US4519870A - Method for producing a single crystal US4519870A - Method for producing a single crystal
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